Non-Destructive Imaging of Insulated Gate Bipolar Transistor Power Modules

Examples are given of differing techniques of non-destructive imaging of semiconductor devices in order to detect faults which may affect their lifetime. Images are shown from optical microscopy and also X-ray systems to illustrate the visibility of faults under differing visualisation techniques. The techniques also include three dimensional visualisation. Issues with the silicone gel are described and separation of the silicon and aluminium cross sections.