Ferroelectric Few Layer Black Phosphorus Field-Effect Transistors for SRAM Application

Two-dimensional materials such as few layer black phosphorus owing to the unique electronic properties of the atomically thin two-dimensional layered structure, can be made into the future metal-oxide-semiconductor field-effect device technology. In this paper, Ferroelectric HZO (HfZrOx) applied on few layer black phosphorus FETs are modeled and demonstrated with improvement on subthreshold swing (SS) to apply on SRAM design.