Analysis of The Hole Trapping Detrapping Component of NBTI Over Extended Temperature Range

An Activated Barrier Double Well Thermionic (ABDWT) model is used to calculat e hole trapping-detrapping (ΔV
_HT
) kinetics, which, together with generation of interface (ΔV
_IT
) and bulk (ΔV
_OT
) traps, model the time kinetics of threshold voltage shift (ΔV
_T
) during and after Negative Bias Temperature Instability (NBTI) stress over an extended temperature range (T: +165 to -40 °C). Transient Trap Occupancy Model (TTOM) enabled Reaction-Diffusion (RD) model is used for ΔV
_IT
and empirical stretched exponential equations are used for ΔV
_OT
. The overall BTI Analysis Tool (BAT) framework is used to model ultra-fast ΔV
_T
time kinetics from Gate First (GF) High-K Metal Gate (HKMG) Fully Depleted Silicon on Insulator (FDSOI) MOSFETs and Replacement Metal Gate (RMG) HKMG SOI FinFETs (SOIFF).