An Analytical SiC MOSFET Switching Behavior Model Considering Parasitic Inductance and Temperature Effect

This paper presents an improved model to demonstrate the effect of parasitic inductance and temperature on switching behavior of silicon carbide MOSFET to offer a reference on power module design. The trans-conductance and parasitic capacitance non-linearity are also considered based on the numerical calculation method. The static and dynamic testing based on DBC and bare die with changeable parasitic inductance and temperature is designed and processed. The experiment shows a high accuracy.