Modelling GaN-HEMT Dynamic ON-state Resistance in High Frequency Power Converter

In order to model GaN device dynamic R
DSon
value due to trapped charge, a measurement circuit to accurately measure device dynamic R
DSon
value under different OFF-state time and ON-state time is at first proposed. Based on measurement results, an analytical model with different cells is proposed to represent dynamic R
DSon
evolution. It is then represented as a behavioural voltage source to compensate device ON-state V
DS
voltage, which can be implemented easily into device manufacturer model in Spice-type electrical circuit simulator. The model is then validated by comparing with the measurement on device dynamic R
DSon
value of different switching frequencies, where the model agrees with experimental results on both transient and stabilized dynamic R
DSon
value.