The Benefits of Using SiN as a Buried Oxide in Germanium-On-Insulator Substrate

This research aims to show the benefits of using SiN as a buried-oxide (BOX) in germanium-on-insulator (GOI) substrate. The substrate is fabricated by using a direct bonding method with a smart-cut technology. Using SiN as a BOX layer instead of conventinal SiO
2
yields the tensile strain of the substrate is ~1.3%-2% approximately, which affects to enhance the mobility of the Ge-based device.