Contact Printed ZnO Nanowires based FET for Large Area Electronics

This paper presents a back-gated ZnO nanowires (NWs) field-effect transistor (FET) realized through the contact printing process. A low-stress
$\mathbf{SiN}_{\mathbf{x}}$
deposited at room temperature by inductively coupled plasma (ICP) process was employed as the back-gate dielectric. Importantly, the adopted fabrication process evades any high-temperature process including for the deposition of the high-quality gate dielectric. The temperature fabrication is critical for development of electronic devices on flexible substrates. The ZnO NW FET shows excellent performance, which is reflected through transconductance (477 nS) and
$\mathbf{I}_{\mathbf{on}}/\mathbf{I}_{\mathbf{off}}$
ratio
$(\sim\mathbf{10}^{\mathbf{6})}$
. Finally, the developed ZnO NW FET was investigated for UV detection and it exhibited a gate tunable photoresponsivity.