Geometrical influence on Self Heating in Nanowire and Nanosheet FETs using TCAD Simulations

The Self-Heating Effect (SHE) is simulated for different architectures of stacked nanowire and nanosheet gate-all-around transistors (GAA-FETs) using Sentaurus TCAD. Although the DC performance parameters of nanosheet GAA-FETs outperforms that of nanowire GAA-FET, we find that for the same output current, stacked nanowire channels outperform a single nanosheet from a thermal management perspective with a SHE on-current degradation in the stacked nanowires of 3.01% compared to 6.42% for the nanosheet. Improving the geometrical design of a stacked nanosheet GAA-FETs by keeping the same summed channel surface area as the single nanosheet, leads to an output current improvement of 11.1% whilst also improving degradation of on-current due to SHE by almost 1%.