Analysis and Compact Modeling of Thermal Noise in Halo Implanted MOSFETs

In this paper, we study the effect of halo doping on the thermal noise behavior of halo doped MOSFETs. The drain current power spectral density
$(S_{ID})$
of thermal noise of halo MOSFETs behaves differently than that of uniformly doped transistors. Hence, it cannot be captured by existing compact models of uniformly doped MOSFETs. Extensive TCAD simulations are performed to identify the root cause of such behavior in halo doped devices and then simulations are extended to study noise behavior in devices like: single side halo (source or drain halo), both side halo, and uniformly doped. We also propose a compact model which captures the thermal noise behavior in halo doped devices.