Design and Fabrication of Self-Organized Ge Gate/SiO2/Si1-xGex-nanoshell with Raised Source/Drain for Advanced Transistors

We report a novel self-organized approach for the fabrication of Ge-nanospherical (NP) gate/SiO
2
/Si
1-x
Ge
x
-recess channel heterostructures with raised source/drain using a single oxidation step. By controlling the width of Si recess-trench, we are able to tune the size of Ge NPs which essentially determines the spherical-gate channel length. Our proposed approach and gate-stacking heterostructure of Ge-NP/SiO
2
/Si
1-x
Ge
x
-recess channel provides an effective building block for the fabrication of advanced Ge-based MOS and quantum transistors.