Reliability of Advanced FinFET Technology Nodes Beyond Planar: Invited

In this paper, we report the extensive reliability characterization and modeling of multiple FinFET technology generations. Comprehensive study on intrinsic reliability of the FinFET such as hot carrier injection (HCI), bias temperature instability (BTI), and time-dependent dielectric breakdown (TDDB) is introduced. With taller and narrower Fin shape for higher performance, the increased FinFET self-heating (FSH) and its reliability impact are characterized and modeled. The localized layout related reliability on FinFET is also experimentally investigated to provide insights for understanding of local layout effect (LLE). The reliability optimization with Far-BEOL forming gas anneal to passivate the dangling bonds and improve dielectric integrity is analyzed by accounting for the effects of anneals using various gas sources (including high/normal pressure
$\mathbf{D}_{2},\ \mathbf{H}_{2}$
, and
$\mathrm{N}_{2}$
). FinFET product HTOL data demonstrates reliability exceeding 10 years of life.