Dependence of RF/Analog and Linearity Figure of Merits on Temperature in Ferroelectric FinFET: A Simulation Study

This article presents a simulation study of the impact of variation in temperature on the transfer characteristics and the RF/analog performance like transconductance (g
_m
), gate capacitance (C
_gg
), cutoff frequency (f
_t
), and transconductance frequency product (TFP) of the ferroelectric FinFET (Fe-FinFET). In addition, the impact of temperature on the linearity parameters such as higher order harmonics (g
_m2
and g
_m3
), second- and third-order voltage intercept points (VIP
₂
and VIP
₃
), third-order power-intercept point (IIP
₃
), third-order intermodulation distortion (IMD
₃
), and 1-dB compression point is estimated for wide variation of temperature in the Fe-FinFET. It is seen that temperature has a significant impact on the RF/analog and linearity parameters, and these figure of merits (FoMs) are the functions of temperature. Analysis reports that RF/analog parameters are suppressed, whereas the linearity FoMs are improved as temperature changed from 250 to 350 K.