The Study on the 3300V Low Loss FS-IGBT

A 3300V/62.5A low loss FS-IGBT was developed by using the carrier storage layer structure and laser annealing process on the back p+ collector, which could lower the saturation voltage. The effects of laser annealing energy and P+ collector dose on dynamic and static state were studied. Considering the trade-off of the turn-off loss and the saturation voltage, the IGBT was finally designed with the 2.35V saturation voltage, 132mJ turn-off loss.