Simulation of Sensor Capacitive Elements Built into the Microsystem-On-Chip

This article presents the results of circuit-technical modeling of integral sensor capacitive elements built directly into the microsystem-on-crystal for the research and evaluation of changes in the capacities of elements in the ranges of their small values within 0.1-1.0 pF. The capacitive elements under study are integrated into a circuit containing an input inverter, a trigger type amplifier and an output signal cascade. The investigated capacities elements were connected in parallel to the gate capacities of the input CMOS inverter. Such switching changes the capacities gates of the transistors of the input CMOS inverter, which affects the period and amplitude of the output pulses, which is detected and amplified by the trigger and the output cascade.