Electronic States and Magnetic Properties of GaN Artificial Atoms

The properties of electron states in a magnetic field of a flat GaN-based quantum dots containing two interacting electrons have been investigated in detail. The results were compared with those obtained for traditional semiconductor quantum systems such as InSb and InAs quantum dots. The effects of electron-electron interaction were found to be significantly stronger in GaN than in InSb and InAs. It has been found that the electrons in the GaN quantum dots are in a different ground state than the corresponding electrons in InSb and InAs quantum dots due to the stronger Coulomb interaction. In the study of magnetization in GaN quantum dots, important results were also obtained those were not previously observed in quantum systems. Changes of the magnetization of quantum dots with changing of the magnitude of external magnetic field were analyzed.