Characterization of Nanowire Field Effect Transistor and Comparison Based on Different Performance Criteria

This work presents a characteristic study of Cylindrical Surrounding Gate Nanowire Field Effect Transistor for two different channel material (Si, GaAs). The device simulation has been carried out both in Semi-classical regime using the Drift-Diffusion method and quantum regime using the Self-Consistent Non-Equilibrium Green's Function approach. The necessary process flow for modeling the proposed device emphasizing the comparative benefits of different channel materials has been described in this paper. Simulation results show that Si device exhibits better threshold voltage and subthreshold swing but GaAs device is better in on-to-off state current ratio and drain induced barrier lowering (DIBL).