Reliability of low temperature poly-Si TFT employing counter-doped lateral body terminal

A new low-temperature poly-Si TFT employing a counter-doped lateral body terminal is proposed and fabricated, in order to enhance the stability of poly-Si driving circuits. The LBT structure effectively suppresses the kink effect by collecting the counter-polarity carriers and suppresses the hot carrier effect by reducing the peak lateral field at the drain junction. The proposed device is immune to dynamic stress, so that it is suitable for low voltage and high speed driving circuits of AMLCD.