An intra-expansion trap surface suppress multipactor

In view of the multipactor effect caused by the resonant multiplication of secondary electrons in space high-power microwave components, this paper proposes an intra-expansion trap surface to strongly suppress the emission of secondary electrons, and analyzes the suppression characteristics on multipactor via numerical simulation. We track each electrons' trajectory inside the trap to obtain secondary electron emission, and compare with a traditional straight hole trap to present its suppression effects. In addition, the influence of the structure parameters on the secondary electron emission characteristics and the power threshold of multipactor was studied. Results show that comparing with the traditional straight hole trap surface, the proposed intra-expansion trap surface performs 13% more remarkable suppression effect on secondary electron emission, and the power threshold of multipactor can be improved from 8969W to 15437W. A deeper intra-expansion trap surface can enhance the multipactor power threshold further.