Modeling and Verification of 3-Dimensional Resistive Storage Class Memory with High Speed Circuits for Core Operation

In this paper, we, for the first time, propose the modeling and verification of 3-dimensional storage class memory (SCM) using new memory with high speed circuits for core operation. For the memory analysis with the simulation, the RC model of interconnections and core operation circuit models are combined in the same simulation environment. Therefore, we modeled the memory elements using passive resistances and voltage controlled switches in circuit simulation system for compatibility. To verify the proposed model, we compared the characteristics of the memory cell with the behavior model which verified to the experimental data. The overall characteristics of memory cell model are similar with the conventional behavior model. In addition, we simulated the core operation of 3-dimensional resistive SCM with the proposed models and verify the applicability in time-domain.