Design and Implementation of Microwave Circuits in 0.35 µm SiGe BiCMOS Technology for UWB Applications

The article deals with the integrated front-end UWB ASIC circuits designed for the concept of M-sequence based wideband reflectometer. New circuits were designed and manufactured in low-cost 0.35 μm SiGe BiCMOS technology supplied by AMS. Special attention is paid to the integrated System on Chip (SoC) UWB Radar with built-in 15-bit M-sequence generator and integrated wave separation coupler. In the proposed configuration the presented circuits represent huge potential in noninvasive measurement. The UWB circuits are designed to achieve 13 GHz baseband bandwidth with the total power consumption up to 2 W.