The Study of P-pillar and Trench Technology in VDMOS

The influences of P-pillar and trench technology in VDMOS have been studied by the comparison of five 600 V VDMOS structures, which contain the conventional VDMOS (C-VDMOS), split-gate VDMOS with one floating P-pillar in the middle (SG-VDMOS-P1), split-gate VDMOS with two P-pillars on the each side (SG-VDMOS-P2), split-gate VDMOS with a P-pillar under the trench (SG-VDMOS-TP1) and SG-VDMOS-P2 with a central trench (SG-VDMOS-TP2). The breakdown voltages (BV) and on-resistances (Ron) of five structures are simulated by the TCAD. The simulation results are given in this paper.