Analytical Thermal Model for Self-Heating Effects in Advanced FinFET Devices

An analytical thermal model for self-heating effects in advanced FinFET devices is proposed in this paper. The heat generation profiles of FinFET under different source/drain doping concentrations and bias voltages are investigated. Based on the curve fitting of heat source distribution of device and the extraction of equivalent lumped thermal resistances, a one-dimensional (1-D) analytical thermal model is developed for efficient simulation of self-heating effects in FinFETs. The accuracy of the proposed model are verified by the commercial solver COMSOL.