An optoelectronic CMOS memory circuit for parallel detection and storage of optical data

A CMOS static RAM (SRAM) circuit capable of detecting and storing optically transmitted data is described. Bits of data are transferred to the memory circuit via an array of parallel light beams. A 16-b optoelectronic SRAM was fabricated in a standard bulk CMOS process and tested using argon and helium-neon lasers. Data contained in an array of 16 light beams with an average power of 3.35 mu W/pixel were successfully transferred to the SRAM in parallel fashion. The storage of the optical information was verified by electronically addressing each cell. The optical data transfer technology is extended to other systems in which high speed and parallelism are essential.<
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