Characterization and Robustness Evaluation of 3.3 kV/40 mΩ SiC DMOSFETs

This paper presents the static and dynamic performance characterization of 3.3 kV/40 m Ω silicon carbide DMOSFETs developed by GeneSiC Semiconductor. The devices investigated in this paper (chip size -42.9 mm
²
) are assembled in high-voltage capable package. The switching performance is characterized through double-pulse inductive load testing at room temperature. The impact of DC link voltages (1500 V and 2000 V), drain currents (20 A, 30 A, 40 A and 50 A), and external gate resistors (3.5 Ω, 8 Ω and 15 Ω) is investigated. Robustness evaluation under single-shot avalanche and short circuit conditions is performed. The maximum short circuit withstand time at 1500 V and 1800 V drain voltages is investigated. The impact of gate drive voltage on short circuit withstand time is discussed.