A better TID hardened Dopingless Lateral Bipolar Transitor on SiGe-OI design

Impact of Total Ionization Doze (TID) on the charge plasma induced dopingless lateral bipolar transistor on SiGe-OI is studied. This paper proposes a new TID hardened charge plasma induced dopingless bipolar design - Triple Sided Charge Plasma (3SCP) Symmetric Lateral Bipolar Transistor (SLBT) on SiGe-OI. With our proposed 3SCP design we were able to show that the TID impact on the current gain is hardened as compared to the already reported charged plasma dopingless design.