Millimeter-wave InP Device Technologies for Ultra-high Speed Wireless Communications toward Beyond 5G

We present a 300-GHz wireless transceiver (TRx) that can support a data rate of more than 100 Gb/s based on an InP-based high electron mobility transistor (InP-HEMT), for the era of "Beyond 5G". Special device technologies, such as the backside DC line technique and low loss monolithic microwave integrated circuit (MMIC) to waveguide transition technique, for implementing MMICs at very high frequencies have been introduced. The building blocks of our TRx, i.e., amplifiers and a mixer, were fabricated based on these techniques and showed superior performance. We successfully demonstrated 100-Gb/s wireless data transmission using our TRx at a link distance of 2.2 m. We also achieved 300 GHz, 120 Gb/s, 9.8-m wireless data transmission by applying our fabricated high-linearity PAs to our TRx. To the authors' knowledge, These are the world highest data rates achieved with electronic-device-based 300-GHz TRx.