Modeling and Simulation of Diode Triggered Silicon Controlled Rectifier Behavior under ESD Stresses

A Diode Triggered Silicon Controlled Rectifier (DTSCR) is modeled. This DTSCR compact model is able to simulate the DTSCR's I-V characteristics with snapback. Overshoot related parameters in this model also reproduces the overshoot phenomenon in transient simulation. Simulation of non-linear resistivity in the high current region is modeled based on the electro-thermal behavior and velocity saturation. This model is not only able to simulate quasi-static I-V under typical ESD stresses, but can predict ESD failure with arbitrary input ESD waveforms.