100 °C deposited transparent silicon nitride film for O-band photonic applications

A transparent silicon nitride film deposited at 100 °C is developed by liquid-source chemical vapor deposition (LSCVD) method. With a combination of the series of spectrometric analysis, we reveal that the waveguide shows low propagation loss (~1.0 dB/cm) with practically applicable high refractive index (~1.85) in the O-band (1260-1360 nm).