High Performance Visible-Range Photodetector for Wide-Bandwidth Applications

We present a theoretical model of front illuminated GaN Optical Field Effect Transistor (OPFET) with floating gate accounting for photovoltaic and photoconductive effects. Our simulation results reveal desirable photodetector characteristics in the visible-region at the modulation frequencies in the microwave to terahertz range. The device exhibits superior performance than many of the photodetectors working at microwave or terahertz frequencies. The device has a great potential for wide bandwidth applications.