A K-Band High-Gain LNA in 0.13-µm RF CMOS

This paper presents a K-band low-noise amplifier (LNA) for automotive radar applications. The LNA features high gain and low noise using a 3-stage cascode topology, which has been designed in a 0.13-μm RF CMOS. According to the measurement results, the maximum gain is 31.2 dB at 24 GHz and the -3-dB bandwidth has 1.7 GHz from 23.8 to 25.5 GHz. The NF achieves 4.9 dB at 24.5 GHz. The input and output return losses S11 and S22 at 24 GHz are -13.5 dB and -10.5 dB, respectively. The total power consumption is 22.3 mW at a supply of 1.5 V. The chip occupies a whole area of 0.93×0.57 mm
²
.