Research on Parallel Current Sharing Scheme of 1200V/100A SiC MOSFET

The superior characteristics of silicon carbide devices have attracted great attention from all over the world. Due to the outstanding advantages of SiC MOSFET, such as high frequency, high operating temperature, high power level and so on, they can increase the power density and reduce cooling requirements. However, SiC MOSFET are at the stage of development. It is necessary to do well in device modeling and device testing before using them. In some high-power situations, the power level of SIC MOSFET is still not up to the requirement. It needs to be used in parallel, thus a great current sharing effect is indispensable. In this paper, the model of SiC MOSFET FF11MR12W1M1-B11 is built and verified to be correct by simulation. The external parameters and internal parameters that affect the parallel current sharing effect are analyzed, based on which, a current sharing scheme is proposed and verified.