Channel Doping Concentration Influence on BESOI MOSFET Light Sensor

The
^BE
SOI (Back Enhanced SOI) MOSFET is a new device that was developed and fabricated at the University of Sao Paulo in 2015. Its main advantages are the reconfigurable behavior, i.e., can work both like Pand N-type transistor depending only of the back gate bias, and fabrication simplicity. This paper studies the influence of channel doping concentration on the sensitivity of
^BE
SOI MOSFET used as a light sensor. The light sensitivity is investigated for different doping elements (boron and phosphorus) and it is shown that one impurity is more suited for a certain operation mode, i.e., pMOS and nMOS. An optimal doping concentration for better light sensitivity is obtained, resulting in 10
¹⁷
cm
^-3
of boron for p-type (V
_GB
<; <; 0) and the same level of phosphorus for n-type (V
_GB
>> 0) BESOI MOSFET.