High-Voltage ( $\overline{\text{2}}01$ ) $\beta$ -Ga2O3 Vertical Schottky Barrier Diode With Thermally-Oxidized Termination

In this letter, a high-performance (2̅01) β-Ga
₂
O
₃
vertical Schottky Barrier Diode (SBD) with a thermally oxidized termination is reported. A novel edge termination at the Schottky contact edge is formed by using thermal oxidation treatment, which reduces the electron concentration and effectively suppresses the peak electric field. By using a thermal oxidation termination, the breakdown voltage (V
_br
) of β-Ga
₂
O
₃
SBD increases from 380 V to 940 V, and the specific on-resistance (R
_on,sp
) just increases from 2.9 mQ· cm
²
to 3.0 mQ· cm
²
. Our device demonstrates a power figure of merit (V
_br
²
/R
_on,sp
) as high as 295 MW/cm
²
. These results indicate that the thermally oxidized termination shows a new way to improve the breakdown characteristics of β-Ga
₂
O
₃
SBD.