A 5 to 18GHz, 10W GaN Power Amplifier Using Non-Distributed Approach

This contribution deals with the design of a wideband 10W power amplifier based on non-distributed approach using 0.25 μm AlGaN/GaN on SiC substrate. Due to the moderate power density of the process, the power amplifier has been designed using the non-distributed (conventional common source) approach with class AB operation. Thus, Gain flatness and output power and PAE become hard to maintain throughout the frequency bandwidth in non-distributed topology. Fabricated Power amplifier exhibits a power gain of 5dB and greater than 10W of saturated Power.