Neutron Induced Single Event Upset (SEU) Testing of Commercial Flash Memory Devices with and without Embedded Error Correction Codes (ECC)

Results of neutron induced single event upset testing of the Spansion (Cypress) 128Mb, 90nm, S29GL128P and 256Mb, 65nm, S25FL256S MirrorBit NOR Flash memory, the latter with embedded error correction codes, are described.Five samples of each memory type were irradiated with a 14-MeV neutron source. The units were tested after irradiated statically as well as under bias using different combinations of continual read/write/erase/correct loops and using a variety of bit patterns. Results for Single Event Latchup (SEL), Single Event Functional Interrupt (SEFI) and correctable and uncorrectable Single Event Upset (SEU) errors are presented along with cross section data and soft error rates.