Total Dose Effects on Novel Al/TiO2/n-Ge Metal-Insulator-Semiconductor Contacts under Gamma-ray Irradiation

This work demonstrates the total dose effects of novel Al/TiO
2
/n-Ge MIS contacts under gamma-ray irradiation. After gamma-ray irradiation, both the forward and reverse current density for the MIS contacts degraded. Electrical and XPS results indicated that the irradiation induces large amount of oxygen vacancies in TiO
2
, but this will not degrade the characteristic. Thus, a conclusion may draw that the degradation is attributed to the inter-diffusion of TiO
2
and Al, forming high resistance interface between TiO
2
and Al.