Effect of Deep Trap Levels on Green Luminescence in $\beta$-Ga2O3

The paper deals with thermally-stimulated luminescence (TSL) and luminescence under X-ray excitation of β -Ga
₂
O
₃
ceramics doped with 0.1% (Mg, Si). The obtained emission spectra are typical for β -Ga
₂
O3 and contain a broad emission band of 325-600 nm which can be decomposed into three elementary bands using a Gaussian fit, in particular, with maxima near the UV (380-390 nm), blue (BL 440-450 nm) and green (GL 530-540 nm) spectral regions. The intensity of the GL band increases by almost an order of magnitude, while the intensity of the BL and UV bands remain unchanged after irradiation of β -Ga
₂
O
₃
:0.1% (Mg, Si) polycrystalline samples. The effect of “increasing” the green luminescence band of β-1 Ga
₂
O
₃
was reversible. The high intensity of the green luminescence band decreases to its initial value after heating of the samples to temperatures above 360 K. Restoring the original state of the sample is accompanied by intense TSL in the green region of the spectrum.