A Review on Recent Characterization Effort of CM EMI in Power Electronics System with Emerging Wide Band Gap Switch

This paper provides review of recent approaches in characterization of common mode electromagnetic interference (EMI) of the wide bandgap (WB) power switch in emerging medium-voltage power electronics applications including but are not limited to electric ship, more electric aircraft, and micro-grid. Based on this extensive review, the paper will investigate the future research goal for the system level EMI analysis in Mississippi State University (MSU). Introduction of WB gap devices such as silicon carbide (SiC) or gallium nitride (GaN) MOSFET are being widely used and rapidly expanded in emerging medium voltage power applications with their high efficiency and high-power density characteristics. However, its high frequency switching impact on the system's operation has resulted in unprecedented EMI noise, especially in ungrounded ship electric system. In this paper, new circuit configurations for reducing EMI effects, the causes, and mitigation techniques has been comprehensively reviewed. The design of effective experimental setup, testing procedure, and future research thrust in MSU has been derived based on this extensive review.