Transposable 3T-SRAM Synaptic Array Using Independent Double-Gate Feedback Field-Effect Transistors

In this article, we present a transposable three-transistor static random access memory (3T-SRAM) array consisting of independent double-gate feedback fieldeffect transistors as binary synaptic devices and access transistors. The synaptic functions of the 2 × 2 SRAM array are investigated-through mixed-mode technology computeraided design simulations. This 3T-SRAM array provides parallel and bidirectional synaptic updates with fast operating speed. Furthermore, a simplified spike-timing-dependent plasticity learning rule is implemented by adjusting the widths of memory pulses. A compact cell area and a lowleakage power consumption allow this 3T-SRAM array to be used for adaptive synaptic devices in a large-scale neuromorphic system.