Lumped charge PSPICE model for high-voltage IGBTs

A novel physics-based PSPICE IGBT model is presented. Its main peculiarities are the accuracy of the results both at low and high voltages. The employed approach is an evolution of the lumped-charge standard approach, in the sense that it additionally includes an accurate model for depletion capacitances and carrier mobilities, including carrier-carrier scattering. The internal subdivision of the current fluxes into electrons and holes allows a best adherence of the model to the device physics, and permits the inclusion of phenomena affecting single species of carriers. The model has been tested successfully on a commercial IGBT module rated at 3300 V-1200 A.