Growth of Ga2(O,S)3 Alloy Films on YSZ Substrates by Mist Chemical Vapor Deposition

We fabricated Ga
2
(O,S)
3
films, alloys of Ga
2
O
3
with Ga
2
S
3
, on YSZ substrates by mist-CVD method. It is practically impossible to realize the p-type conductivity in Ga
2
O
3
films, because of the deep acceptor levels resulted from the deep valence energy position. We are trying to conquer the problem by alloying Ga
2
O
3
with Ga
2
S
3
, because Ga
2
S
3
exhibits p-type conductivity due to the energetically shallower valence band and acceptors. All the fabricated Ga
2
(O,S)
3
films were amorphous. Sulfur composition of Ga
2
(O,S)
3
films were successfully controlled at almost entire range by changing molar concentration of sulfur precursor in source. The surface morphology is largely varied with incorporation of sulfur atoms, suggesting the different growth modes of Ga
2
(O,S)
3
films.