GaSb/GaAs quantum nanostructures for intermediate band solar cell under high sunlight concentration

In this study, we characterized type II GaSb/GaAs quantum nanostructure solar cells for application to intermediate band solar cells. The self-organized GaSb quantum dots (QDs) or quantum rings (QRs) were formed by molecular beam epitaxy. In the plots of open-circuit voltage (VOC) vs. light concentration ratio, difference in the increment of VOC against the concentration ratio was observed at low (< 10 suns) and high (> 10 suns) concentration ratio for both devices. These results indicated a possibility of the operation as intermediate band solar cells of GaSb/GaAs quantum nanostructures.