Comprehensive Characterization of B+ Implanted Silicon after Rapid Thermal Annealing

Formation of high integrity junctions with low junction leakage and defects is essential for fabricating high performance devices with advanced node devices. Understanding of implant activation and implant damage recovery mechanisms during annealing process steps is limited. Development of noncontact implant activation and residual damage monitoring techniques would be beneficial. In this paper, B
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implanted Si wafers were annealed under various conditions and characterized using conventional characterization techniques such as four point probe and room temperature photoluminescence (RTPL) spectroscopy.