ZrO2 Ferroelectric FET for Non-volatile Memory Application

We demonstrate for the first time ZrO
₂
ferroelectric field-effect transistors (FeFETs) for embedded non-volatile memory applications. Multiple sweeps of polarization versus voltage measurement demonstrate that a metal/ZrO
₂
/Ge capacitor is entirely free of wake-up effect and has significantly improved fatigue characteristics compared to a HfZrO
_x
control device. Thanks to relatively small remnant polarization and a high-quality ZrO
₂
/Ge interface, up to 10
⁷
cycles program/erase endurance, 10 ns program/erase speed, and >10-year data retention at 85 °C are achieved.