Linearity of AlGaN/GaN HEMTs with Different Gate-to-Source Length

In this paper, the performance of AlGaN/GaN HEMTs with different gate-to-source length (L
_GS
) and with a fixed distance of drain-to-source (L
_DS
) is presented. The increase in L
_GS
makes the source resistance (R
_S
) increase. In general, the larger the resistance, the better the linearity and stability in the power amplifier, thereby these devices were used to study and compare the device characteristics. According to output 3
_rd
order intercept (OIP3), there is no linear trend in the linearity with related to the L
_GS
and R
_S
. The optimal layout for the different geometry in this study is the device with gate width of 250 μm and L
_GS
of 1.325 μm.