Photon-Enhanced Conductivity Modulation and Surge Current Capability in Vertical GaN Power Rectifiers

In this work, we investigate the temperature-dependent forward conduction performance, the reverse recovery behavior and surge current capability of the vertical GaN Schottky barrier diode (SBD) and PN diode (PND). Compared with the SBD, the vertical GaN PND can deliver photon-enhanced conductivity modulation (PECM), temperature-independent differential ON-resistance, and higher surge current capability. It is experimentally verified that the PECM and zero reverse recovery can be simultaneously realized in the vertical GaN PND.