Plasma Process Optimization of Silicon Film Deposition from Trichlorosiliane Precursor with OES Monitoring

The growth of chlorinated hydrognated silicon (Si:H:C1) films on Si substrate from trichlorosilane (SiHCl
₃
) using the plasma enhanced chemical vapour deposition system is investigated with optical emission spectroscopy (OES) endpoint detector. Surface profiler and Fourier transform infrared spectroscopy were used to measure the film properties-thickness and chemical bonds. The role of chlorine and hydrogen in crystal formation is discussed in terms of surface chemistry through film deposition. It showed that higher deposition rate (> 0.3nm/sec) could be achieved with increasing input power and the surface termination species depend on the RF power level and flow rate of a trichlorosilane (SiHCl
₃
) and hydrogen (H
₂
) mixture gas.