Two-Dimensional Analytical Model of AlGaN/GaN HEMTs with a Etched AlGaN Barrier Layer

Take complete depletion as example, a two-dimensional analytical model of AlGaN/GaN high-electron-mobility transistors (HEMTs) with a etched AlGaN barrier layer is formulated in this paper. Based on Poisson's equation, the off-state channel potential and electric field distributions are achieved. By comparing with the ISE TCAD simulation results, the accuracy of the analytical model is validated and a good consistency is obtained.