High Performance Field Effect Transistor based on Large-sized Highly Crystalline MoS2 Single Crystal

Growth of highly crystalline MoS
₂
single crystals with large edge length of ~260 μm was demonstrated via the sulfurization process. The high quality of the MoS
₂
atomic layer, exemplified by its optical property and electrical performance, presents a significant step towards scalable preparation of this material. The back-gated FETs based on as-grown, single-layer MoS
₂
exhibited the extraordinary high electron mobility value (~90 cm
²
V
^-1
s
^-1
) which is the largest reported to date for as-grown, monolayer MoS
₂
in a 2-terminal device configuration.