Influence of plasma induced damage during active etch on silicon defect generation

The role of plasma induced damage during active nitride etch in silicon defect generation was investigated. A correlation was established between the overetch pattern and surface densities of stacking faults and dislocations. High junction leakage and yield loss were observed in areas of the wafer subjected to excessive overetch. Optimization of overetch time resulted in defect free wafers and significant yield improvement.